Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10R) , 2077-2081
- https://doi.org/10.1143/jjap.29.2077
Abstract
The structures to reduce the thermal stress in GaAs grown on Si substrates produced by the thermal expansion coefficient mismatch are proposed and analyzed by the finite-element method. It was shown that the stress can be below 1/10 of the stress in the planar GaAs on Si by partially separating the GaAs layer from the substrate. The preliminary experimental results show that this technique reduces the stress to 1/10 of the normal stress in the area of as wide as 200×250 µm2.Keywords
This publication has 4 references indexed in Scilit:
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si SubstratesJapanese Journal of Applied Physics, 1990
- Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained-layer superlatticesApplied Physics Letters, 1989
- Epitaxial Lateral Overgrowth of GaAs on a Si SubstrateJapanese Journal of Applied Physics, 1989
- New method to relax thermal stress in GaAs grown on Si substratesApplied Physics Letters, 1987