New method to relax thermal stress in GaAs grown on Si substrates
- 5 October 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (14) , 1069-1071
- https://doi.org/10.1063/1.98794
Abstract
A new method to grow stress-free GaAs on bent Si substrates is proposed and demonstrated by metalorganic chemical vapor deposition. The stress produced by the thermal expansion coefficient difference of Si and GaAs is compensated by the external mechanical strain applied in the substrate at high temperature. The photoluminescence peak energy of GaAs on Si becomes almost the same as that of the stress-free GaAs on GaAs grown by liquid phase epitaxy by applying this method.Keywords
This publication has 8 references indexed in Scilit:
- AlGaAs/GaAs stripe laser diodes fabricated on Si substrates by MOCVDIEEE Journal of Quantum Electronics, 1987
- Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substratesApplied Physics Letters, 1987
- Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substratesApplied Physics Letters, 1986
- 14.5% conversion efficiency GaAs solar cell fabricated on Si substratesApplied Physics Letters, 1986
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVDJapanese Journal of Applied Physics, 1986
- Epitaxial growth and material properties of GaAs on Si grown by MOCVDJournal of Crystal Growth, 1986
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984