AlGaAs/GaAs stripe laser diodes fabricated on Si substrates by MOCVD
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (6) , 1080-1084
- https://doi.org/10.1109/jqe.1987.1073468
Abstract
The lasing characteristics of the 7 μm wide oxide stripe double heterostructure lasers grown on Si and on GaAs substrates are measured and compared. The averaged threshold current and differential efficiency on Si are about double and one-half, respectively, of those on GaAs, but those of the best device on Si are almost the same as the standard device on GaAs. The lasing wavelength is almost the same, but the spectrum spreading is larger for those on Si, and the diodes on Si substrates lase in TM or TM + TE modes, while those on GaAs lase only in TE. These phenomena are explained an the basis of strain-induced valence band splitting and the reduction in electron effective mass in the conduction band.Keywords
This publication has 16 references indexed in Scilit:
- Growth of high quality GaAs layers on Si substrates by MOCVDJournal of Crystal Growth, 1986
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1985
- MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- GaAs Shallow-homojunction solar cells on Ge-coated Si substratesIEEE Electron Device Letters, 1981
- Depolarization of the lasing emission from CW double-heterostructure junction lasersIEEE Journal of Quantum Electronics, 1975
- Piezoelectroreflectance in GaAsPhysical Review Letters, 1966
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965