Charge-Deposition Spectra in Thin Slabs of Silicon Induced by Energetic Protons
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4394-4397
- https://doi.org/10.1109/TNS.1983.4333144
Abstract
Pulse-height spectra were measured in thin slabs of silicon (2.4 to 97 μm) exposed to protons incident at energies from 25 MeV to 158 MeV at the Harvard Cyclotron. The data is compared to the predictions of the simulation model of Farrell and McNulty and shown to be in good agreement over the range of detector thicknesses and proton energies tested. The probability of depositing a given energy in an event was found to decrease exponentially with the amount of energy to be deposited. This probability, corresponding to the negative slope on a semilogarithmic plot depends on the dimensions of the sensitive volume and the energy of the incident proton.Keywords
This publication has 9 references indexed in Scilit:
- Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of SiliconIEEE Transactions on Nuclear Science, 1982
- Proton-Induced Nuclear Reactions in SiliconIEEE Transactions on Nuclear Science, 1981
- Energy Spectra of Heavy Fragments from the Interaction of Protons with Communications MaterialsIEEE Transactions on Nuclear Science, 1981
- Nuclear Reactions in SemiconductorsIEEE Transactions on Nuclear Science, 1980
- A distribution function for ion track lengths in rectangular volumesJournal of Applied Physics, 1979
- Single Event Upset of Dynamic Rams by Neutrons and ProtonsIEEE Transactions on Nuclear Science, 1979
- Soft Errors Induced by Energetic ProtonsIEEE Transactions on Nuclear Science, 1979
- Monte Carlo Calculations of Nuclear Evaporation Processes. III. Applications to Low-Energy ReactionsPhysical Review B, 1959
- Monte Carlo Calculations on Intranuclear Cascades. I. Low-Energy StudiesPhysical Review B, 1958