Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

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Abstract
The amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor deposited silicon layers has been studied in the temperature range 320–480 °C. At each irradiation temperature the average grain diameter increases linearly with the Kr dose, while the grain density remains constant within the experimental accuracy. The growth rate follows a complex behavior which can be described by dynamic defect generation and annihilation. The absolute value of the grain growth rate is equal to that of the ion-assisted epitaxial layer by layer crystallization in the silicon (111) orientation. This result can be related to the crystal grain structure and morphology.