Ion-induced epitaxial growth of chemical vapor deposited Si layers
- 29 February 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (9) , 712-714
- https://doi.org/10.1063/1.99355
Abstract
Thin layers of Si were chemical vapor deposited onto as‐received 〈100〉 p‐type Si wafers. The samples were subsequently implanted with 1×1015/cm2, 80 keV As. The native oxide film impedes the growth even at 800 °C, 1 h; instead irradiation with 600 keV Kr++ at 450 °C causes the epitaxial growth of the entire deposited and amorphized Si layer. The sheet resistance of these As‐doped layers (130 Ω/⧠) coincides with that of samples in which the amorphous layer was obtained by As ion implantation only. The value is at least ten times lower than that of the polycrystalline layer doped with the same amount of As.Keywords
This publication has 10 references indexed in Scilit:
- Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion BeamsJapanese Journal of Applied Physics, 1987
- Orientation and doping effects in ion beam annealing of α-siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in SiliconMRS Proceedings, 1984
- Effect of structure and impurities on the epitaxial regrowth of amorphous siliconApplied Physics Letters, 1980
- Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurementsApplied Physics Letters, 1980
- Solid-state epitaxial growth of deposited Si filmsApplied Physics Letters, 1979
- Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in siliconJournal of Applied Physics, 1978
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978