Orientation and doping effects in ion beam annealing of α-silicon
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 470-474
- https://doi.org/10.1016/s0168-583x(87)80093-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Ion beam annealing during high current density implants of phosphorus into siliconJournal of Applied Physics, 1986
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Role of Electronic Processes in Epitaxial Recrystallization of Amorphous SemiconductorsPhysical Review Letters, 1983
- Interface structures during solid-phase-epitaxial growth in ion implanted semiconductors and a crystallization modelJournal of Applied Physics, 1982
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+ Ion ImplantationJapanese Journal of Applied Physics, 1981
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979
- Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in siliconJournal of Applied Physics, 1978
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978