Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A) , L84
- https://doi.org/10.1143/jjap.26.l84
Abstract
Thin 200-nm-thick Si crystals were grown in Si layers amorphized with 800-keV As2+ ions by inducing lateral solid-phase epitaxy at 500°C with a 140-keV Si2+ psuedo-linear ion beam formed by scanning a point-focused beam at 5 kHz. It is shown that reduction of dose rate of the ion beam is crucially important to induce the epitaxy because the amount of damage produced by the ions significantly increases with the dose rate and even amorphization occurs at a higher dose rate.Keywords
This publication has 7 references indexed in Scilit:
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Ion beam induced epitaxial crystallisation of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in siliconApplied Physics Letters, 1984
- Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphirePhysical Review B, 1984
- Novel low-temperature recrystallization of amorphous silicon by high-energy ion beamApplied Physics Letters, 1982
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979