Sequential tunnelling and magnetically enhanced bistability in double barrier resonant-tunnelling structures
- 1 January 1991
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. T35, 215-220
- https://doi.org/10.1088/0031-8949/1991/t35/045
Abstract
A brief overview of resonant tunnelling is given. It is shown that the resonant buildup of electron space charge can be enhanced in appropriately designed devices to give intrinsic bistability in the I(V) characteristics. Evidence is provided for the sequential model of resonant tunnelling. At high magnetic fields, the intrinsic bistability effect is greatly enhanced due to the high density of states available in a Landau level.Keywords
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