Rapid thermal annealing characteristics of As+- and BF+2 -implanted Si
- 1 July 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1) , 77-79
- https://doi.org/10.1063/1.94975
Abstract
The electrical properties and distribution of impurities in As+‐ and BF+2 ‐implanted Si activated using rapid thermal annealing (RTA) are discussed. Sheet mobility and activation of the implanted Si 〈100〉 samples (As+: 60 keV, 1×1015 cm−2 and BF+2 : 45 keV, 1×1015 cm−2) as functions of annealing temperature are reported for RTA. Secondary ion mass spectroscopy atomic profiles of samples preannealed at 600 °C in furnace, followed by RTA are presented. Full electrical activation of As occurs at 1100 °C and that for B (BF2) occurs at 950 °C. A 600 °C, 1‐h furnace preanneal does not have any noticeable effect on reducing the dopant redistribution during 2‐s, 1170 °C RTA for 1×1015 cm−2 As+ implants and during 2‐s, 1100 °C RTA for 1×1015 cm−2 BF+2 implants. This lack of ‘‘diffusion difference’’ is attributed to the high RTA temperatures at which mechanisms other than the point defects caused early time enhanced diffusion play a dominant role in impurity redistribution.Keywords
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