Exploratory observations of random telegraphic signals and noise in homogeneous hydrogenated amorphous silicon
- 1 July 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (1) , 120-123
- https://doi.org/10.1063/1.347103
Abstract
Noise measurements on unhydrogenated and hydrogenated rf sputtered intrinsic amorphous silicon reported by D’Amico, Fortunato, and Van Vliet [Solid-State Electron. 28, 837 (1985)] have 1/f and Lorentzian spectra, respectively. Similar noise measurements on glow-discharge deposited hydrogenated amorphous intrinsic silicon reported by Bathaei and Anderson [Philos. Mag. B 55, 87 (1987)] gave a 1/f m spectrum with 0.7<m105 V/cm) as the current fluctuates chaotically and this is also the prebreakdown regime of the sample.This publication has 13 references indexed in Scilit:
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