Localized-State Interactions in Metal-Oxide-Semiconductor Tunnel Diodes

We report on the study of large two-level, low-frequency resistance fluctuations in 1-μ${\mathrm{m}}^2$ metal-oxide-silicon tunnel diodes, which are due to the strongly correlated emptying and filling of ensembles or clusters of interacting localized states in the oxide. The interaction mechanism is attributed to ionic forces in the strained oxide. It can give rise to complex structure in the switching noise and, under strong electrical stress, can result in the breaking of oxide bonds by the collective action of localized states.