Room-temperature pulsed operation of GaAsSb/GaAsvertical-cavity surface-emitting lasers
- 27 May 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (11) , 903-904
- https://doi.org/10.1049/el:19990633
Abstract
GaAs-based long-wavelength vertical-cavity surface-emitting lasers with a GaAsSb quantum well active layer have been fabricated for the first time. Room temperature pulsed oscillation was obtained at a wavelength of 1.22 µm with a threshold current of 20 mA for devices with 25 µm square mesa.Keywords
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