Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy
- 11 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2) , 97-98
- https://doi.org/10.1063/1.100360
Abstract
Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined in Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, in openings as small as 3 μm wide, but no growth occurred on the dielectric coating. Cathodoluminescence from individual laser stripes was observed at 300 K with a wavelength determined to be 1.57 μm and at 100 K with a wavelength of 1.46 μm.Keywords
This publication has 1 reference indexed in Scilit:
- Selective epitaxial growth of gallium arsenide by molecular beam epitaxyApplied Physics Letters, 1987