Piezoelectric properties of GaAs for application in stress transducers
- 15 July 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (2) , 914-918
- https://doi.org/10.1063/1.349598
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Pressure measurement by GaAs piezoelectric sensorsElectronics Letters, 1990
- A new GaAs technology for stable FETs at 300 degrees CIEEE Electron Device Letters, 1989
- GaAs integrated Hall sensor with temperature-stabilised characteristics up to 300°CElectronics Letters, 1989
- Monolithic GaAs multivibrator for operation at temperatures up to 300°CElectronics Letters, 1989
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985