Anodic stabilization and decomposition mechanisms in semiconductor (photo)-electrochemistry
- 1 September 1989
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
- Vol. 269 (2) , 237-249
- https://doi.org/10.1016/0022-0728(89)85135-6
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- A comparative study of anodic charge-transfer kinetics at dark p-type GaAs and at illuminated n-type GaAs electrodes in aqueous and in mixed aqueous-methanolic solutionsBerichte der Bunsengesellschaft für physikalische Chemie, 1989
- On the role of chemical steps in the anodic dissolution of illuminated n-type GaAs electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1987
- The participation of surface decomposition intermediates in charge transfer processes at dark p‐type GaP/electrolyte interfacesBerichte der Bunsengesellschaft für physikalische Chemie, 1987
- Studies on the n-GaAs Photoanode in Aqueous Electrolytes. 1. Behaviour of the Photocurrent in the Presence of a Stabilizing AgentBerichte der Bunsengesellschaft für physikalische Chemie, 1985
- Charge transfer and corrosion processes at III-V semiconductor/electrolyte interfacesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1984
- Study of Stabilization and Surface Recombination on n ‐ GaP Photoelectrodes: Mechanisms and InterrelationJournal of the Electrochemical Society, 1982
- Investigation of photoelectrochemical corrosion of semiconductors. 1The Journal of Physical Chemistry, 1980
- On the kinetics of semiconductor-electrode stabilizationFaraday Discussions of the Chemical Society, 1980
- Electrochemical Reactions at the IlluminatedCdSeAnodeZeitschrift für Physikalische Chemie, 1974
- Study of noise associated with oxidation reactions at the illuminated single crystal zinc oxide anodeJournal of Solid State Chemistry, 1971