Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by Selective Epitaxial Growth (SEG) of Silicon using a thermally nitrided SiO2 field insulator
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 391-394
- https://doi.org/10.1016/s0167-9317(97)00087-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Elimination of the sidewall defects in selective epitaxial growth (SEG) of silicon for a dielectric isolation technologyIEEE Electron Device Letters, 1996
- Low defect planar SOI islands adjacent to selective epitaxial growth (SEG)Microelectronic Engineering, 1995
- Characterization of sidewall defects in selective epitaxial growth of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Fully planar method for creating adjacent ‘‘self-isolating’’ silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowthApplied Physics Letters, 1992