Application of a new detector for cathodoluminescence measurements in the wavelength range to 1.8 μm

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Abstract
The energetic gap structure of semiconductors or insulators can strongly be influenced by the local appearance of inhomogenities, impurities, dopants or vacancies. A high spatial resolution cathodoluminescence (CL) measuring technique makes it possible to investigate this gap structure via spectral analysis of the emitted CL. This can lead to a detailed knowledge of the local defect distribution.The wavelength range which could be detected by CL measurements has, up to the present, been limited to values less than 1 μm, because no detectors were available for higher wavelengths. By use of a new germanium detector, the measuring range could be extended to 1.8 μm. This makes it possible to analyse the CL properties, both of materials with small gap energies and of deep impurities.The detector properties which are important for CL measurements are presented. The efficiency of the detector is demonstrated by CL investigations of barium titanate ceramics and silicon. The results are discussed and compared to results obtained using conventional detectors.