Influence of potential fluctuation on optical and electrical properties in GaN

13 April 1998

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 72 (15) , 1848-1850
https://doi.org/10.1063/1.121203

Abstract

We observed strong correlation between optical properties and transport properties in GaN. Both the intensity and the energy of near-band edge photoluminescence (PL) peak in GaN:Si vary with its mobility. Such behavior has been explained by the potential fluctuation associated with the inhomogeneous impurities or local defects, leading to the space-charge scattering of carriers and the redshift of the PL line. We also discuss the strain relaxation in GaN:Si.

Keywords

SPACE CHARGE

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