Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN
- 1 March 1997
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (3) , 243-251
- https://doi.org/10.1007/s11664-997-0158-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxyJournal of Electronic Materials, 1996
- Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaNJournal of Electronic Materials, 1996
- Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Thermal and flow issues in the design of metalorganic chemical vapor deposition reactorsJournal of Crystal Growth, 1994
- Electron mobilities in gallium, indium, and aluminum nitridesJournal of Applied Physics, 1994
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth, 1991
- Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Determination of the spatial variation of interface trapped charge using short-channel MOSFET'sIEEE Transactions on Electron Devices, 1983