Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy
- 1 May 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5) , 799-803
- https://doi.org/10.1007/bf02666639
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electron Hall mobility of n-GaNApplied Physics Letters, 1995
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Growth of GaN and AlGaN for UV/blue p-n junction diodesJournal of Crystal Growth, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Electronic structures and doping of InN, N, and NPhysical Review B, 1989
- Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAsJapanese Journal of Applied Physics, 1985
- Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine SystemJournal of the Electrochemical Society, 1975