Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10A) , L824
- https://doi.org/10.1143/jjap.24.l824
Abstract
Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.Keywords
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