Steady-state electron and hole space charge distribution in LPCVD silicon nitride films
- 15 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10) , 802-804
- https://doi.org/10.1063/1.90942
Abstract
Trapped electron and hole space charge distributions in silicon nitride are derived from steady‐state measurements of the change in flatband voltage versus the maximum field in the nitride. These measurements coupled with the Arnett‐Yun model provide a good relative measure of the hole and electron trap densities, trapping lengths, and cross sections. Significant differences between hole and electron values at 25 and 175 °C were observed.Keywords
This publication has 11 references indexed in Scilit:
- Charge centroid in MNOS devicesJournal of Applied Physics, 1977
- Transient charge and current distributions in the nitride of MNOS devicesIEEE Transactions on Electron Devices, 1977
- Charge centroid and trapping model for MNOS structuresJournal of Applied Physics, 1976
- Memory loss in MNOS capacitorsJournal of Applied Physics, 1976
- Transient conduction in insulators at high fieldsJournal of Applied Physics, 1975
- Simple technique for determination of centroid of nitride charge in MNOS structuresApplied Physics Letters, 1975
- Electron and hole transport in CVD Si3N4 filmsApplied Physics Letters, 1975
- Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devicesApplied Physics Letters, 1975
- Measurements of charge propagation in Si3N4 filmsApplied Physics Letters, 1974
- Effect of pulse shaping on laser-induced spallationApplied Physics Letters, 1974