The Effect of the Oxide Layer on the Diffusion of Ga in Si
- 1 November 1972
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 11 (11)
- https://doi.org/10.1143/jjap.11.1742
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The Anomalous Diffusion of Gallium in SiliconJapanese Journal of Applied Physics, 1971
- Retardation of Diffusion by Diffusion-Induced Dislocation in SiliconJapanese Journal of Applied Physics, 1970
- The Retarded Diffusion of Gallium in Silicon. IJapanese Journal of Applied Physics, 1968
- Effects of High Phosphorus Concentration on Diffusion into SiliconJournal of the Electrochemical Society, 1968
- Diffusion of gallium through a silicon dioxide layerJournal of Physics and Chemistry of Solids, 1964
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956