Molecular beam epitaxy of CdF2 layers on CaF2(111) and Si(111)
- 30 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (22) , 2964-2966
- https://doi.org/10.1063/1.111395
Abstract
Cadmium fluoride single crystal layers have been grown on CaF2/Si(111) or Si(111) substrates by molecular beam epitaxy. The structures are expected to have attractive electronic properties. The growth was monitored by reflections high energy electron diffraction (RHEED) techniques. A distinct (√3×√3) R30° superstructure has been observed on the CdF2(111) surface at growth temperatures below 150 °C. RHEED intensity oscillations indicate a two‐dimensional growth mode of CdF2.Keywords
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