Modelling of the photothermal radiometric response of a layered dielectric-on-semiconductor structure
- 31 January 1990
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 5 (2) , 89-93
- https://doi.org/10.1016/0921-5107(90)90037-c
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Thermal wave characterization of silicon which had been high energy ion implanted and furnace annealedMaterials Science and Engineering: B, 1989
- Semiconductor assessment using photothermal radiometryInfrared Physics, 1988
- Pulsed photothermal radiometry for depth profiling of layered mediaApplied Physics Letters, 1987
- Analysis of semitransparent layered materials by modulated photothermal radiometry: application to the bonding and thickness control of enamel coatingsCanadian Journal of Physics, 1986
- Photothermal investigation of transport in semiconductors: Theory and experimentJournal of Applied Physics, 1986
- Pulsed photothermal evaluation of layered materialsJournal of Applied Physics, 1984
- Theory of the photoacoustic effect in semiconductors influence of carrier diffusion and recombinationApplied Optics, 1982
- A generalized model of photothermal radiometryJournal of Applied Physics, 1982
- Theory of the photothermal radiometry with solidsJournal of Applied Physics, 1981