Predicting switched-bias response from steady-state irradiations MOS transistors
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1806-1817
- https://doi.org/10.1109/23.101194
Abstract
No abstract availableKeywords
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