Defects in (100)CdTe epilayers grown on (100)GaAs by MOCVD
- 2 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 103 (1-4) , 380-388
- https://doi.org/10.1016/0022-0248(90)90215-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- X-ray study of the crystalline structure of CdTe layers grown on (001), (111)A, and (111)B CdTe surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- TEM studies of epitaxial CdTe and (Hg, Cd)Te grown by MOVPE on GaAs and CdTe substratesJournal of Crystal Growth, 1988
- Dislocations and electrical characteristics of HgCdTeJournal of Crystal Growth, 1988
- Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100)Applied Physics Letters, 1987
- Epitaxial Hg1−xCdxTe growth by low-temperature metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Metal–organic chemical vapor deposition hybrid substrates for HgCdTeJournal of Vacuum Science & Technology A, 1986
- Epitaxial growth of CdTe on GaAs by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1986
- The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substratesJournal of Crystal Growth, 1985
- Photon assisted OMVPE growth of CdTeJournal of Crystal Growth, 1985