Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100)
- 28 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (13) , 973-974
- https://doi.org/10.1063/1.98780
Abstract
The quality of crystal structure of CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) substrates has been studied by x-ray diffraction and Rutherford backscattering/channeling methods. The depth distribution of displaced atoms in the overlayers with thicknesses varying from 1.6 to 3.1 μm shows that a defect-free surface is obtained when the film thickness is about 2 μm.Keywords
This publication has 6 references indexed in Scilit:
- Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100)Journal of Vacuum Science & Technology A, 1986
- Evaluation of substrates for growth of HgCdTe by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1986
- (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxyApplied Physics Letters, 1986
- Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAsApplied Physics Letters, 1986
- High resolution electron microscope study of epitaxial CdTe-GaAs interfacesApplied Physics Letters, 1985
- EPITAXY OF CdTe ON (100) GaAsMRS Proceedings, 1985