5 keV to 2 MeV lithium implantation and diffusion in amorphous silicon
- 1 June 1989
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 108 (2) , 185-203
- https://doi.org/10.1080/10420158908230308
Abstract
Low dose implanted lithium depth profiles in preamorphized silicon have been measured in the energy range of 5 keV to 2 MeV by means of three different nuclear reaction techniques and SIMS measurements, and they are compared to theory. Though the agreement is good for the mean projected range, we find systematic deviations for the range straggling. Further, the shapes of lithium depth profiles are studied as a function of the preamorphization dose. Also, the diffusion of li in amorphous Si was measured between – 18 and + 350°C. It is described by D = D 0·exp(-EA/kT), the value of D 0 and EA ranging from those for purely interstitial diffusion (D 0 = 2 · 10−(4±0.5) cm2 s−1 and EA = 0.74 ± 0.5 eV) up to higher ones, which describe trap controlled diffusion (D 0 = 3 × 10+(3±1) cm2 s−1 and E = 1.74 ± 0.1 eV). A gradual transition between those extremes with diffusion time is observed.Keywords
This publication has 27 references indexed in Scilit:
- Range profiles of helium in solidsRadiation Effects, 1987
- Electrical properties of Ti and Cr ion implanted diamonds dependent on target temperatureNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Mass and energy dependence of implanted ion profiles in the AZ111 photoresistJournal of Applied Physics, 1986
- Energy dependence of the Z1-range oscillation effect in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Implantation profiles of Li in metalsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Distributions of light ions and foil destruction after irradiation of organic polymersJournal of Applied Physics, 1985
- Stopping power values of Be, C, Al and Si for 4He ionsNuclear Instruments and Methods, 1980
- Channeling and random equivalent depth distributions of 150 keV Li, Be, and B implanted in SiJournal of Applied Physics, 1980
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961
- Bremsformel f r Elektronen relativistischer GeschwindigkeitThe European Physical Journal A, 1932