Self-consistent electron subbands of GaAs/AlGaAs heterostructures in magnetic fields parallel to the interface
- 12 April 1993
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 5 (15) , L217-L222
- https://doi.org/10.1088/0953-8984/5/15/001
Abstract
The effect of strong magnetic fields parallel to the GaAs/GaxAl1-xAs interface on the subband structure of a 2D electron layer is investigated theoretically. A system with two levels occupied in zero magnetic field is considered and the magnetic-field-induced depletion of the second subband is studied. The confining potential and the electron energy dispersion relations are calculated self-consistently. The electron-electron interaction is taken into account in the Hartree approximation.Keywords
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This publication has 3 references indexed in Scilit:
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- Electron energy levels in GaAs-heterojunctionsPhysical Review B, 1984
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering SpectraJournal of the Physics Society Japan, 1982