(111) CdTe molecular beam epitaxy growth on misoriented (001) GaAs substrate
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 126-130
- https://doi.org/10.1016/0022-0248(90)90950-p
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAsApplied Physics Letters, 1989
- Adsorption of Te on GaAs(100)Surface Science, 1989
- Growth of (111) CdTe on tilted (001) GaAsApplied Physics Letters, 1989
- Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)Applied Physics Letters, 1988
- Structure of vapor-deposited GaxIn1−xAs crystalsJournal of Applied Physics, 1974