Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs
- 17 July 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (3) , 235-237
- https://doi.org/10.1063/1.101917
Abstract
Residual strains in (001) and (111) thick layers of CdTe and ZnTe grown by molecular beam epitaxy on nominal or slightly tilted (001) GaAs have been investigated by reflectance, photoluminescence, and optical pumping experiments at low temperature. Strains are found to be independent of both layer orientations and thicknesses in the range 2–6 μm. They are compressive ≊−0.5×10−3 in CdTe and tensile ≊10−3 in ZnTe. Estimates of thermal expansion effects show that they are the dominant cause of residual strains in these heterostructures.Keywords
This publication has 23 references indexed in Scilit:
- Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfacesApplied Physics Letters, 1987
- Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1986
- High quality CdTe epilayers on GaAs grown by hot-wall epitaxyApplied Physics Letters, 1986
- Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxyApplied Physics Letters, 1985
- Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxyApplied Physics Letters, 1985
- Photoluminescence in CdTe grown on GaAs by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Photoluminescence of CdTe: A comparison of bulk and epitaxial materialJournal of Vacuum Science & Technology A, 1985
- Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1984
- CdTe films on (001) GaAs:Cr by molecular beam epitaxyApplied Physics Letters, 1984