Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxy
- 15 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 599-601
- https://doi.org/10.1063/1.96084
Abstract
(111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x-ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.Keywords
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