High quality CdTe epilayers on GaAs grown by hot-wall epitaxy
- 12 May 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (19) , 1276-1278
- https://doi.org/10.1063/1.97002
Abstract
Hot-wall epitaxy is used for the first time for the growth of high quality CdTe epilayers on semi-insulating GaAs. The quality of the films is investigated by photoluminescence at 10 K, 78 K, and room temperature. The photoluminescence spectra at 78 K show a strong bound exciton recombination at about 1.58 eV with a linewidth of 11 meV. The linewidth of the bound exciton emission at 10 K is 1 meV. The electrical properties of the as-grown layers are measured by Hall effect yielding a hole concentration of p=3×1012 cm−3 and a mobility of 100 cm2/V s at 270 K.Keywords
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