Sodium-induced 2×1→1×1 surface structural transition on Si(111)
- 15 July 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (3) , 1838-1841
- https://doi.org/10.1103/physrevb.46.1838
Abstract
Sodium deposited on the cleaved Si(111)2×1 surface induces a 2×1→1×1 surface structural transition at about 1/2 monolayer coverage. Angle-resolved direct and inverse photoemission reveal the surface to be semiconducting. The measured energy dispersion of the empty Na-induced surface state is only consistent with calculations that favor the threefold-hollow site for the Na adsorption position. Its bonding character (ionic versus covalent) will be discussed.Keywords
This publication has 19 references indexed in Scilit:
- Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metalsPhysical Review Letters, 1991
- Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110)Physical Review Letters, 1990
- Covalency in the adsorption of Na on Si(111)Physical Review B, 1990
- Surface electronic structure of submonolayer to full-monolayer coverages of alkali metals on GaAs(110): K and CsPhysical Review B, 1989
- Structure of the K/Si(100)-(2×1) surface: Semiempirical self-consistent-field crystal orbital analysisPhysical Review B, 1989
- Adsorption of potassium on the ideal Si(111) surfacePhysical Review B, 1988
- Metallization of Silicon upon Potassium AdsorptionPhysical Review Letters, 1987
- Electronic structure of the alkali-metal overlayers on the π-bonded Si(111)2×1 surfaceSolid State Communications, 1986
- Surface states and dipoles on Si(111)1×1:NaJournal of Vacuum Science & Technology A, 1986
- Novel electronic properties of a potassium overlayer on Si(001)-(2×1)Physical Review Letters, 1986