Imaging of curved facet unstable resonator semiconductorlasers operating at 980 nm
- 19 March 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (6) , 561-562
- https://doi.org/10.1049/el:19980462
Abstract
A novel technique is presented for imaging the interior of high power semiconductor lasers and amplifiers based on viewing the scattered spontaneous emission from the active region through the substrate. To demonstrate its potential the authors have fabricated novel unstable resonator semiconductor lasers using a dry-etch process and successfully imaged the optical field distribution including an internal focal point.Keywords
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