Gallium arsenide on insulator by electrostatic bonding
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxideJournal of Applied Physics, 1988
- Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulatorApplied Physics Letters, 1987
- MESFET's on a GaAs-on-insulator structureIEEE Electron Device Letters, 1987
- A Field‐Assisted Bonding Process for Silicon Dielectric IsolationJournal of the Electrochemical Society, 1986
- Chemical Etching of GaAsJournal of the Electrochemical Society, 1984
- Lateral diffusion of zinc and tin in gallium arsenideIEEE Transactions on Electron Devices, 1974
- Low-Temperature Electrostatic Silicon-to-Silicon Seals Using Sputtered Borosilicate GlassJournal of the Electrochemical Society, 1972
- Field Assisted Glass-Metal SealingJournal of Applied Physics, 1969