Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide
- 15 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (8) , 3934-3937
- https://doi.org/10.1063/1.341349
Abstract
The direct growth of GaAs by molecular-beam epitaxy on nominally (100)-oriented silicon with a buried implanted oxide is demonstrated. Nomarski interference contrast optical microscopy, transmission electron microscopy, and Rutherford backscattering techniques have been employed to characterize these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins and threading dislocations are the predominant defects in these layers. Furthermore, we report the absence of antiphase domain boundaries within the GaAs hillocks.This publication has 12 references indexed in Scilit:
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