GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxy
- 15 June 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (12) , 1146-1148
- https://doi.org/10.1063/1.94672
Abstract
Epitaxial growth of GaAs/(Ca, Sr) F2/GaAs structures by means of molecular beam epitaxy has been demonstrated. It has been shown that it was possible to grow layers with good crystalline quality and no noticeable interdiffusion at the interfaces. In addition, the uppermost GaAs layers present interesting electrical properties, exhibiting electron Hall mobilities of about 1300 cm2/Vs.Keywords
This publication has 9 references indexed in Scilit:
- Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1983
- Epitaxial growth of BaF2 on semiconductor substratesThin Solid Films, 1983
- Insulating epitaxial films of BaF2, CaF2 and BaxCa1−xF2 grown by MBE on InP substratesJournal of Crystal Growth, 1982
- An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and siliconThin Solid Films, 1982
- MBE-grown fluoride films: A new class of epitaxial dielectricsJournal of Vacuum Science and Technology, 1981
- Epitaxial growth and optical evaluation of gallium phosphide and gallium arsenide thin films on calcium fluoride substrateSolid State Communications, 1970
- Epitaxial Growth of Gallium Phosphide on Cleaved and Polished (111) Calcium FluorideJournal of Applied Physics, 1970
- Formation Conditions and Structure of Ge Films Deposited on Polished (111) CaF2 Substrates in an Ultrahigh-Vacuum SystemJournal of Applied Physics, 1965
- Chemical and Optical Studies of Samarium Doped CaF[sub 2] Type Single CrystalsJournal of the Electrochemical Society, 1965