Preparation of gallium arsenide films on insulators by artificial epitaxy
- 29 February 1984
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (1) , 239-242
- https://doi.org/10.1016/0022-0248(84)90098-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Diataxial growth of silicon and germaniumJournal of Crystal Growth, 1981
- Silicon graphoepitaxy using a strip-heater ovenApplied Physics Letters, 1980
- Artificial epitaxy (diataxy) of silicon and germaniumActa Physica Academiae Scientiarum Hungaricae, 1979
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979
- Single-crystal films of silicon on insulatorsBritish Journal of Applied Physics, 1967