Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structures
- 3 March 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (9) , 587-589
- https://doi.org/10.1063/1.96475
Abstract
GaAs films were grown on CaxSr1−xF2/GaAs (100) structures by molecular beam epitaxy using a two‐step growth technique and the effects of lattice mismatch between the GaAs and fluoride films at elevated temperature and room temperature were investigated. Electron Hall mobility measurements showed that the lattice matching at elevated temperature is more desirable for device applications.Keywords
This publication has 7 references indexed in Scilit:
- Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channelingApplied Physics Letters, 1985
- Epitaxial relations in CaxSr1−xF2 films grown on GaAs {111} and Ge(111) substratesApplied Physics Letters, 1985
- Growth of semiconductor/insulator structures: GaAs/fluoride/GaAs (001)Journal of Vacuum Science & Technology B, 1985
- GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1983
- Effect of Residual Stress on Hole Mobility of SOS MOS DevicesJapanese Journal of Applied Physics, 1978
- Elastoresistance of n-type silicon on sapphireJournal of Applied Physics, 1974