Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)

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Abstract
Fabrication and characteristics of Schottky gated poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene) field-effect transistors (FETs) have been reported for the first time. The FET has been realized utilizing the polymer film formed on a Schottky gated electrode deposited upon a glass substrate. From FET characteristics, the carrier concentrations and carrier mobilities are evaluated for poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene). Electrical properties are discussed on the basis of the FET characteristics for the nominally undoped samples.