Gas-Sensitive Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10A) , L1849
- https://doi.org/10.1143/jjap.29.l1849
Abstract
Novel gas-sensitive junction characteristics have been observed in poly(3-alkylthiophene) Schottky diodes. It has been found that there are two types of gases. One type of gas suppressed the reverse bias current in the Schottky diodes and the other enhanced the reverse bias current. These results have been explained in terms of a gas-dependent band scheme, where they were also confirmed by the capacitance-voltage measurements.Keywords
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