Giant piezoelectric effect in GaN self-assembled quantum dots
- 31 May 1999
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 30 (4-5) , 353-356
- https://doi.org/10.1016/s0026-2692(98)00134-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Growth kinetics and optical properties of self-organized GaN quantum dotsJournal of Applied Physics, 1998
- Reduction of oscillator strength due to piezoelectric fields in quantum wellsPhysical Review B, 1998
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaNPhysical Review B, 1997
- The Blue Laser DiodePublished by Springer Nature ,1997
- Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasersElectronics Letters, 1996
- InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization PropertiesJapanese Journal of Applied Physics, 1996
- Optical studies of the piezoelectric effect in (111)-oriented CdTe/Te strained quantum wellsPhysical Review B, 1990
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990