Optical studies of the piezoelectric effect in (111)-oriented CdTe/Te strained quantum wells
- 15 December 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (17) , 11392-11395
- https://doi.org/10.1103/physrevb.42.11392
Abstract
We report on the optical properties of (111)-oriented CdTe/ Te single quantum wells grown by molecular-beam epitaxy on (001) GaAs substrates. Several quantum wells with different widths were coherently grown on a single, thick Te buffer layer, which induces the same in-plane strains ≊1% in all quantum wells. A strong red shift of the exciton transition is observed. It increases linearly with the well width at a rate of 2.5 meV/Å, so that exciton transitions occur at energies below the gap of bulk CdTe for wider wells. This linear red shift can only be explained by the existence of a dominant piezoelectric field across the strained quantum wells.
Keywords
This publication has 14 references indexed in Scilit:
- Optical properties of CdTe/Cd1-xZnxTe quantum wells and superlatticesJournal of Crystal Growth, 1990
- Deformation potentials of CdTe epilayers from piezo and wavelength modulation reflectivity spectra analysisJournal of Crystal Growth, 1990
- Photoluminescence studies of CdS/CdSe wurtzite superlattices; Evidence for large piezoelectric effectsSurface Science, 1990
- Subband structure of strained-layer CdTe/ZnTe superlattices: A reexaminationPhysical Review B, 1990
- Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructureApplied Physics Letters, 1990
- Theory of semiconductor superlattice electronic structureReviews of Modern Physics, 1990
- Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAsApplied Physics Letters, 1989
- Growth of (111) CdTe on tilted (001) GaAsApplied Physics Letters, 1989
- Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer SuperlatticesPhysical Review Letters, 1989
- Linearity (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe, and ZnTePhysical Review Letters, 1987