Single-transistor-latch-induced degradation of front- and back-channel thin-film SOI transistors
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (5) , 282-284
- https://doi.org/10.1109/55.145054
Abstract
The front- and back-channel transistor characteristics in thin-film silicon-on-insulator (SOI) MOSFETs have been studied before and after front-channel hot-carrier stress resulting from single-transistor latch. This stress causes the following significant changes: (a) a reduction of the front-channel current for a given gate voltage, (b) an increase in front-channel drain-source breakdown voltage when measured in the reverse mode, and (c) a decrease in the back-channel transconductance. These changes can be attributed to the hot-carrier induced interface traps on both front and back interfaces near the drain junction.Keywords
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