Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6B) , L762
- https://doi.org/10.1143/jjap.31.l762
Abstract
N-type ZnO thin films with a crack and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification with strong electrical breakdown strength of higher than 107 V/cm. The capacitance-voltage (C-V) characteristics show an approximate linear C -2-V relationship in the reverse bias condition. These results indicate that the ZnO films prepared by the sol-gel process are good enough to be used as a semiconducting material in electrical devices.Keywords
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