Properties of zinc phosphide/zinc oxide heterojunctions
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 1069-1075
- https://doi.org/10.1063/1.330518
Abstract
The properties of p-Zn3P2/n-ZnO heterojunctions prepared by sputter deposition of ZnO onto Zn3P2 substrate are investigated. Analysis of the experimental data indicates an interface state density greater than 1012 cm−2 and a capture cross section on the order of 10−13 cm2. Using the experimental data a band diagram for Zn3P2/ZnO heterojunction is proposed. Mechanisms responsible for the low, open-circuit voltage are discussed.This publication has 23 references indexed in Scilit:
- Zinc phosphide-zinc oxide heterojunction solar cellsApplied Physics Letters, 1981
- Polycrystalline Zn3P2 Schottky barrier solar cellsApplied Physics Letters, 1981
- Evidence of p/n homojunction formation in Zn3P2Applied Physics Letters, 1980
- Defect dominated conductivity in Zn3P2Journal of Physics and Chemistry of Solids, 1980
- Optical properties of Zn3P2Journal of Applied Physics, 1979
- Photocurrent suppression in heterojunction solar cellsApplied Physics Letters, 1975
- The capacitance of p-n heterojunctions including the effects of interface statesIEEE Transactions on Electron Devices, 1967
- Electrical characteristics of Ge-GaAs and Ge-Si p-n heterojunctionsIEEE Transactions on Electron Devices, 1965
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962