A Generalized Formulation of Augmented Drift-Diffusion Transport Suitable for Use in General Purpose Device Simulators
- 25 August 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Simulation of a GaAs MESFET including velocity overshoot: an extended drift-diffusion formalismIEEE Electron Device Letters, 1989
- An assessment of approximate nonstationary charge transport models used for GaAs device modelingIEEE Transactions on Electron Devices, 1989
- On the use of Thornber's augmented drift-diffusion equation for modeling GaAs devicesIEEE Transactions on Electron Devices, 1988
- On the flow equation in device simulationJournal of Applied Physics, 1988
- Hot-electron flow in an inhomogeneous fieldApplied Physics Letters, 1988
- Current equations for velocity overshootIEEE Electron Device Letters, 1982